BFY50 Transistor Datasheet pdf, BFY50 Equivalent. Parameters and Characteristics. BFY50 Datasheet, BFY50 NPN General Purpose Transistor Datasheet, buy BFY50 Transistor. BFY50 datasheet, BFY50 circuit, BFY50 data sheet: PHILIPS – NPN medium power transistors,alldatasheet, datasheet, Datasheet search site for Electronic.
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Philips customers using or selling these products for use byf50 such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale Apr 22 7. V SCA54 All rights are reserved. Avis Eustacia Chase 1 years ago Views: General description NPN general-purpose transistors.
Designed for general-purpose amplifier and low speed switching applications. They are designed for high speed. Philips Semiconductors Philippines Inc.
(PDF) BFY50 Datasheet download
Benefit is lower component count, internal compensation for temperature and current gain spread. High oltage Switching Features: These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied.
Product data sheet Supersedes data of Apr Adtasheet protection for DSL lines. RF transistor with internal bias circuit. Quick reference data Rev. Suitable for applications requiring low noise and good h FE linearity, eg. Product specification Supersedes data of Feb Product data sheet Supersedes data of Oct All leads are isolated More information.
Designed for use in general purpose power amplifier and switching applications. BB Low-voltage variable capacitance double diode.
Philips – datasheet pdf
Description in a plastic package using TrenchMOS technology. Product specification Supersedes data of May To make this website work, we log user data and share it with processors. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with More information. Exposure to limiting values for extended periods may affect device reliability.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Stress above one or more of the limiting values may cause permanent damage to the device. Product specification Supersedes data of Apr Product specification Supersedes data of Sep Application information Where application information is given, it is advisory and does not form part of the specification.
Philips Semiconductors, 6F, No. This data sheet contains final product specifications. Low voltage PNP power transistor. All leads are isolated. Protection for Ethernet lines.
Datwsheet switching No secondary breakdown. BZX series Voltage regulator diodes. Low voltage NPN power Darlington transistor. Product specification Supersedes data of Aug Product data sheet Supersedes data of Jan Characteristic Symbol Rating Unit.
BFY50 Datasheet(PDF) – NXP Semiconductors, NPN medium power transistors
This Datasheet is presented by the m anufacturer. NPN medium power transistor. Description High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications More information. Reproduction datashret whole or in part is prohibited without the prior written consent of the copyright owner.
Please v isit our website for pricing and availability at www. High voltage fast-switching NPN power transistor. Product data sheet Supersedes data of May